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位置：首页 > IC中文资料第3581页 > IRFZ14

IRFZ14价格

参考价格：￥1.8509

型号：IRFZ14PBF 品牌：VISHAY 备注：这里有IRFZ14多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ14批发/采购报价，IRFZ14行情走势销售排行榜，IRFZ14报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ14

HEXFET Power MOSFET

Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRF

IRFZ14

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VishayVishay Siliconix

威世威世科技公司

IRFZ14

isc N-Channel MOSFET Transistor

文件：280.09 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ14

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14

HEXFET Power MOSFET

Infineon

英飞凌

IRFZ14_V02

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VishayVishay Siliconix

威世威世科技公司

IRFZ14L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ14LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

IRFZ14S

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ14S/L

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ14SSLASHL

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ14_11

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14_17

Power MOSFET

文件：1.66617 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14_V01

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14A

isc N-Channel MOSFET Transistor

文件：280.69 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ14L

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14PBF

HEXFET POWER MOSFET

文件：3.36805 Mbytes Page：7 Pages

IRF

IRFZ14S

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14S/IRFZ14L/SiHFZ14S/SiHFZ14L

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFZ14S/SiHFZ14S/SiHFZ14L

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFZ14SPBF

Power MOSFET

文件：382.57 Kbytes Page：11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14STRLPBFA

Power MOSFET

文件：382.57 Kbytes Page：11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14STRR

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ14产品属性

  • 类型

    描述

  • 型号

    IRFZ14

  • 功能描述

    MOSFET N-Chan 60V 10 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ14供应商更多...

更新时间：2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRFZ14
IR
24+
NA/
109
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市明嘉莱科技有限公司
IRFZ14低压MOS管
IR
24+
TO 220
161335
明嘉莱只做原装正品现货
询价
深圳市星宇佳科技有限公司
IRFZ14
IR
96+
TO-220
62
询价
深圳市华斯顿科技有限公司
IRFZ14
IR
25+23+
TO-220
29041
绝对原装正品全新进口深圳现货
询价
深圳市一线半导体有限公司
IRFZ14
IR
24+
TO-220
5220
询价
深圳市高捷芯城科技有限公司
IRFZ14SPBF
VISHAY(威世)
24+
TO-263-3
8498
支持大陆交货,美金交易。原装现货库存。
询价
深圳市纳艾斯科技有限公司
IRFZ14
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
天津市博通航睿技术有限公司
IRFZ14
IR
23+
TO-220
7000
询价
万三科技(深圳)有限公司
IRFZ14
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
深圳市莱克讯科技有限公司
IRFZ14
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
询价

IRFZ14芯片相关品牌

IRFZ14规格书下载地址

IRFZ14参数引脚图相关

IRFZ14数据表相关新闻

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