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位置：首页 > IC中文资料第3581页 > IRFZ14

IRFZ14价格

参考价格：￥1.8509

型号：IRFZ14PBF 品牌：VISHAY 备注：这里有IRFZ14多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ14批发/采购报价，IRFZ14行情走势销售排行榜，IRFZ14报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ14

HEXFET Power MOSFET

Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRF

IRFZ14

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14

isc N-Channel MOSFET Transistor

文件：280.09 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ14

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14

HEXFET Power MOSFET

INFINEON

英飞凌

IRFZ14_V02

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14S

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14S/L

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14SSLASHL

Advanced Process Technology / Surface Mount (IRFZ14S)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ14STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14_11

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14_17

Power MOSFET

文件：1.66617 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14_V01

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14A

isc N-Channel MOSFET Transistor

文件：280.69 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ14L

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

文件：1.58911 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14PBF

Power MOSFET

文件：1.66457 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14PBF

HEXFET POWER MOSFET

文件：3.36805 Mbytes Page：7 Pages

IRF

IRFZ14S

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14S/IRFZ14L/SiHFZ14S/SiHFZ14L

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14S/SiHFZ14S/SiHFZ14L

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14SPBF

Power MOSFET

文件：382.57 Kbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14STRLPBFA

Power MOSFET

文件：382.57 Kbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14STRR

Halogen-free According to IEC 61249-2-21 Definition

文件：303.29 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ14产品属性

  • 类型

    描述

  • 型号

    IRFZ14

  • 功能描述

    MOSFET N-Chan 60V 10 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ14供应商更多...

更新时间：2026-1-27 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
IRFZ14
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市益百分电子有限公司
IRFZ14PBF
IOR
07PB
TO220/
2255
全新原装进口自己库存优势
询价
深圳市明嘉莱科技有限公司
IRFZ14低压MOS管
IR
24+
TO 220
161335
明嘉莱只做原装正品现货
询价
深圳市蓝山航业科技有限公司
IRFZ14PBF
ir
25+
500000
行业低价,代理渠道
询价
深圳市赛美科科技有限公司
IRFZ14S
IR
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
芯有半导体（深圳）有限公司
IRFZ14
SMG
05+
原厂原装
9951
只做全新原装真实现货供应
询价
深圳市科恒伟业电子有限公司
IRFZ14
IR
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
洪芯国际半导体（深圳）有限公司
IRFZ14PBF
VISHAY
26+
SOT23-5
86720
全新原装正品价格最实惠 假一赔百
询价
深圳市宏世佳电子科技有限公司
IRFZ14
IR
2025+
TO-220
4835
全新原厂原装产品、公司现货销售
询价
深圳市欧立现代科技有限公司
IRFZ14PBF
ir
24+
N/A
6980
原装现货,可开13%税票
询价

IRFZ14芯片相关品牌

IRFZ14规格书下载地址

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