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IRFZ14S价格
参考价格：￥3.9584
型号：IRFZ14SPBF 品牌：Vishay 备注：这里有IRFZ14S多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ14S批发/采购报价，IRFZ14S行情走势销售排行榜，IRFZ14S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ14S | Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRFZ14S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ14S | Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFZ14S | Advanced Process Technology / Surface Mount (IRFZ14S) | Infineon 英飞凌 | | |
Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFZ14S产品属性
- 类型
描述
- 型号
IRFZ14S
- 功能描述
MOSFET N-Chan 60V 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO-263-3 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY(威世) |
2447 |
TO-263-3 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
SOT263 |
7000 |
||||
VBsemi/台湾微碧 |
22+ |
D2PAK |
20000 |
公司只做原装 品质保障 |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VishayIR |
24+ |
TO-263 |
2285 |
||||
IR |
24+ |
D2-Pak |
27500 |
原装正品,价格最低! |
|||
IR |
21+ |
TO-263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
VBSEMI/台湾微碧 |
24+ |
D2PAK |
60000 |
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DdatasheetPDF页码索引
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