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IRFZ14S价格
参考价格：￥3.9584
型号：IRFZ14SPBF 品牌：Vishay 备注：这里有IRFZ14S多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ14S批发/采购报价，IRFZ14S行情走势销售排行榜，IRFZ14S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ14S | Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRFZ14S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世 | | |
IRFZ14S | Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世 | | |
IRFZ14S | Advanced Process Technology / Surface Mount (IRFZ14S) | Infineon 英飞凌 | | |
Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世 | | ||
Advanced Process Technology / Surface Mount (IRFZ14S) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世 | | ||
Power MOSFET | VishayVishay Siliconix 威世 | | ||
Power MOSFET | VishayVishay Siliconix 威世 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世 | | ||
Power MOSFET 文件：382.57 Kbytes Page：11 Pages | VishayVishay Siliconix 威世 | | ||
Halogen-free According to IEC 61249-2-21 Definition 文件：303.29 Kbytes Page：9 Pages | VishayVishay Siliconix 威世 | |
IRFZ14S产品属性
- 类型
描述
- 型号
IRFZ14S
- 功能描述
MOSFET N-Chan 60V 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
377 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
21+ |
TO-263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
05+ |
原厂原装 |
4516 |
只做全新原装真实现货供应 |
|||
I |
25+ |
D2PAK |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VishayIR |
24+ |
TO-263 |
2285 |
||||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY(威世) |
24+ |
TO-263-3 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-263 |
7000 |
IRFZ14S规格书下载地址
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DdatasheetPDF页码索引
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