200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100 av

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100 av

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100 av

分立式 MOSFET

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

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COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

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