型号 功能描述 生产厂家 企业 LOGO 操作
IRFU9N20DPBF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

IRF

IRFU9N20DPBF

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

KERSEMI

Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

SMPS MOSFET

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

KERSEMI

N-Channel 200 V (D-S) MOSFET

文件:1.76292 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

文件:336.4 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件:336.4 Kbytes Page:2 Pages

ISC

无锡固电

IRFU9N20DPBF产品属性

  • 类型

    描述

  • 型号

    IRFU9N20DPBF

  • 功能描述

    MOSFET N-CH 200V 9.4A I-PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-20 11:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
05+
TO-251
5000
自己公司全新库存绝对有货
IR
25+
TO-251
30000
全新原装现货,价格优势
IR
23+
TO251
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO251
8650
受权代理!全新原装现货特价热卖!
IR
23+
TO-251
50000
全新原装正品现货,支持订货
IR
23+
TO251
8000
只做原装现货
IR
23+24
TO-251
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
IR
25+23+
TO-251
27294
绝对原装正品全新进口深圳现货
IR
24+
TO-251
811
IR
06+
TO-251
1500
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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