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IRFU9210价格
参考价格:¥4.8316
型号:IRFU9210PBF 品牌:Vishay 备注:这里有IRFU9210多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU9210批发/采购报价,IRFU9210行情走势销售排行榜,IRFU9210报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFU9210 | PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技 | ||
IRFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9210 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | ||
IRFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.9A) 文件:1.78818 Mbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:891.33 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 | |||
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 | |||
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 | |||
DriveFasteners 文件:93.97 Kbytes Page:1 Pages | Heyco Heyco | |||
ACCEPTS16,18or20PINWIDES.O.I.C.BUILDPLUG-INTESTCIRCUITSANDMODULES 文件:173.83 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
IRFU9210产品属性
- 类型
描述
- 型号
IRFU9210
- 功能描述
MOSFET P-Chan 200V 1.9 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO251 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
24+ |
TO 251 |
161109 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-251 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
93 |
50 |
公司优势库存 热卖中!! |
||||
IR |
TO-251-3 |
265209 |
假一罚十原包原标签常备现货! |
||||
VISHAY(威世) |
23+ |
TO-251 |
7845 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2023+ |
TO-251 |
34675 |
原厂全新正品旗舰店优势现货 |
|||
IR |
17+ |
TO-251 |
60000 |
保证进口原装可开17%增值税发票 |
|||
Vishay Siliconix |
23+ |
TO-251AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
22+ |
TO-251 |
32350 |
原装正品 假一罚十 公司现货 |
IRFU9210规格书下载地址
IRFU9210参数引脚图相关
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- IRFS840
- IRFS830
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DdatasheetPDF页码索引
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