IRFU9210价格

参考价格:¥4.8316

型号:IRFU9210PBF 品牌:Vishay 备注:这里有IRFU9210多少钱,2026年最近7天走势,今日出价,今日竞价,IRFU9210批发/采购报价,IRFU9210行情走势销售排行榜,IRFU9210报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFU9210

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)

DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D-

IRF

IRFU9210

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

VishayVishay Siliconix

威世威世科技公司

IRFU9210

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

IRFU9210

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

IRFU9210

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

IRFU9210

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

IRFU9210

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

IRFU9210

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFU9210

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)

Infineon

英飞凌

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A )

文件:1.78818 Mbytes Page:10 Pages

IRF

Power MOSFET

文件:891.33 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

ETC

知名厂家

Drive Fasteners

文件:93.97 Kbytes Page:1 Pages

Heyco

ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES

文件:173.83 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRFU9210产品属性

  • 类型

    描述

  • 型号

    IRFU9210

  • 功能描述

    MOSFET P-Chan 200V 1.9 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
74
优势代理渠道,原装正品,可全系列订货开增值税票
IR
07+
TO-251
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
25+
TO-251
54648
百分百原装现货 实单必成 欢迎询价
IR
24+
TO 251
161109
明嘉莱只做原装正品现货
Vishay
NEW-
MOSFETs
100000
Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK
VISHAY
20+
na
65790
原装优势主营型号-可开原型号增税票
IR
25+
TO-251
4500
全新原装、诚信经营、公司现货销售
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
Vishay Siliconix
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
INTERNATIONA
23+
IPAK
9888
专做原装正品,假一罚百!

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