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IRFU9210价格
参考价格：￥4.8316
型号：IRFU9210PBF 品牌：Vishay 备注：这里有IRFU9210多少钱，2025年最近7天走势，今日出价，今日竞价，IRFU9210批发/采购报价，IRFU9210行情走势销售排行榜，IRFU9210报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世 |   | |
IRFU9210 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世 | | |
IRFU9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D- | IRF | | |
IRFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
IRFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
IRFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
IRFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
IRFU9210 | Power MOSFET | VishayVishay Siliconix 威世 | | |
IRFU9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) | Infineon 英飞凌 | | |
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A ) 文件：1.78818 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：891.33 Kbytes Page：13 Pages | VishayVishay Siliconix 威世 | | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES 文件：173.83 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Drive Fasteners 文件：93.97 Kbytes Page：1 Pages | Heyco | |
IRFU9210产品属性
- 类型
描述
- 型号
IRFU9210
- 功能描述
MOSFET P-Chan 200V 1.9 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
6228 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
NEW |
TO-251 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON/英飞凌 |
25+ |
TO-251 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
01+;12+ |
TO-251 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO 251 |
161109 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
TO-251 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
2025+ |
TO-251 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
IR |
06+ |
TO-251 |
12000 |
原装 |
|||
IR |
23+24 |
TO-251 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
INTERNATIONA |
23+ |
IPAK |
9888 |
专做原装正品,假一罚百! |
IRFU9210规格书下载地址
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DdatasheetPDF页码索引
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