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IRFU9210PBF价格
参考价格:¥4.8316
型号:IRFU9210PBF 品牌:Vishay 备注:这里有IRFU9210PBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRFU9210PBF批发/采购报价,IRFU9210PBF行情走势销售排行榜,IRFU9210PBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9210PBF | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | ||
IRFU9210PBF | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | ||
IRFU9210PBF | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9210PBF | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | ||
IRFU9210PBF | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | ||
IRFU9210PBF | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9210PBF | HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A ) 文件:1.78818 Mbytes Page:10 Pages | IRF | ||
IRFU9210PBF | Power MOSFET 文件:891.33 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | ||
Drive Fasteners 文件:93.97 Kbytes Page:1 Pages | Heyco | |||
ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES 文件:173.83 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
IRFU9210PBF产品属性
- 类型
描述
- 型号
IRFU9210PBF
- 功能描述
MOSFET P-Chan 200V 1.9 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
74 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
Vishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK |
|||
IOR |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
IOR |
11+PBF |
TO-251 |
815 |
现货 |
|||
VISHAY(威世) |
2447 |
TO-251-3 |
115000 |
75个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IR |
22+ |
TO-251 |
20000 |
公司只做原装 品质保障 |
|||
VISHAY(威世) |
24+ |
TO251 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
23+ |
TO-251 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-251 |
7000 |
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