3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9110, SiHFR9110) • Straight lead (IRFU9110, SiHFU9110) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -3.1A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

Power MOSFET

isc P-Channel MOSFET Transistor

文件：345.12 Kbytes Page：2 Pages

Power MOSFET

文件：792.48 Kbytes Page：11 Pages

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110) • Straight Lead (IRFU9110, SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching

HEXFET Power MOSFET

Dynamic dV/dt Rating

文件：3.76945 Mbytes Page：7 Pages

P-Channel 100 V (D-S) MOSFET

文件：1.68872 Mbytes Page：7 Pages

Power MOSFET

文件：845.12 Kbytes Page：13 Pages

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

MEASURING WHEEL

Features • Variety of materials and surface types • Accepts standard 10 mm shaft secured with a set screw • 200mm circumference accurate to +/- 0.1% • Operates from -30° to 80° C

Multi-Range 60 V DC Power Supplies

文件：726.58 Kbytes Page：1 Pages

Releasable Type T Rivets

文件：117.9 Kbytes Page：1 Pages