HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.01321 Mbytes Page：7 Pages

HEXFET® Power MOSFET

Ultra Low On-Resistance Surface Mount (IRFR3910) Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated

ADC3910Dx and ADC3910Sx 10-bit, 25 to 125-MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers

1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 ch.): – 92 mW at 125 MSPS – 59 mW at 25 MSPS – 4 mW in PD mode • Small footprint: 32-VQFN (4mm x 4 mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing

ADC3910Dx and ADC3910Sx 10-bit, 25 to 125MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers

1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 channel): – 92mW at 125MSPS – 59mW at 25MSPS – 4mW in PD mode • Small footprint: 32-VQFN (4mm x 4mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing co

Locking Releasable Wire Clips

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Dual Half Bridge Motor Driver

文件：231.41 Kbytes Page：7 Pages

Dual Half Bridge Motor Driver

文件：245.86 Kbytes Page：7 Pages