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IRFU3910PBF中文资料
IRFU3910PBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR3910)
● Straight Lead (IRFU3910)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRFU3910PBF产品属性
- 类型
描述
- 型号
IRFU3910PBF
- 功能描述
MOSFET MOSFT 100V 15A 115mOhm 29.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-251 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2020+ |
TO-251 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
INFINEON/英飞凌 |
25+ |
TO-251 |
32360 |
INFINEON/英飞凌全新特价IRFU3910PBF即刻询购立享优惠#长期有货 |
|||
IR全系列管{优势热卖} |
1321+ROHS全新 |
SOD-123原厂原封 |
21868 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
|||
IR |
16+ |
TO-251 |
36000 |
原装正品,优势库存81 |
|||
VISHAY |
23+ |
D-PAK |
65400 |
||||
INFINEON |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
Infineon |
2301+ |
TO-251 |
10000 |
全新、原装 |
|||
IR |
2021+ |
TO-251 |
9000 |
原装现货,随时欢迎询价 |
|||
Infineon(英飞凌) |
24+ |
TO-251 |
30346 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
IRFU3910PBF 价格
参考价格：￥1.5143
IRFU3910PBF 资料下载更多...
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KERSEMI相关芯片制造商
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