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IRFU3710ZPBF价格
参考价格：￥6.9184
型号：IRFU3710ZPBF 品牌：INTERNATIONAL 备注：这里有IRFU3710ZPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRFU3710ZPBF批发/采购报价，IRFU3710ZPBF行情走势销售排行榜，IRFU3710ZPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU3710ZPBF | AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co | IRF |   | |
IRFU3710ZPBF | AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co | KERSEMI | | |
IRFU3710ZPBF | AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co | KERSEMI | | |
IRFU3710ZPbF | HEXFET짰 Power MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co | INFINEON 英飞凌 | | |
IRFU3710ZPBF | HEXFET Power MOSFET 文件：4.70307 Mbytes Page：12 Pages | KERSEMI | | |
IRFU3710ZPBF | Advanced Process Technology 文件：365.44 Kbytes Page：12 Pages | IRF | | |
N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | ANALOGPOWER | | ||
General Purpose Packaging Tape 文件：14.65 Kbytes Page：2 Pages | 3M | | ||
Nytye®Mounting Platforms 文件：241.29 Kbytes Page：1 Pages | HEYCO | | ||
Secondary Side Synchronous Post Regulator 文件：226.91 Kbytes Page：12 Pages | LINER 凌力尔特 | | ||
59A100V N-CHANNEL POWER MOSFET TRANSISTOR 文件：278.19 Kbytes Page：7 Pages | KIA 可易亚半导体 | |
IRFU3710ZPBF产品属性
- 类型
描述
- 型号
IRFU3710ZPBF
- 功能描述
MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
24+ |
TO-251 |
219 |
||||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IR/INFI |
24+ |
TO-251 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
16+ |
TO-251 |
6086 |
全新原装/深圳现货库2 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRFU3710ZPBF规格书下载地址
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DdatasheetPDF页码索引
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