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IRFU310价格
参考价格：￥2.4339
型号：IRFU310PBF 品牌：Vishay 备注：这里有IRFU310多少钱，2024年最近7天走势，今日出价，今日竞价，IRFU310批发/采购报价，IRFU310行情走势销售排行榜，IRFU310报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU310 | PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=1.7A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFU310 | PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRFU310 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFU310 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | |
IRFU310 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR310,SiHFR310) •Straightlead(IRFU310,SiHFU310) •Availableintapeandreel •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFU310 | iscN-ChannelMOSFETTransistor 文件：340.47 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
AdvancedPowerMOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
iscN-ChannelMOSFETTransistor 文件：346.02 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：346.01 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=3.6廓,ID=1.7A) 文件：1.80909 Mbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers 文件：50.19 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
SCREWTYPESERIES 文件：382.28 Kbytes Page：1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子（上海）有限公司 |  | | |
UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers 文件：984.54 Kbytes Page：5 Pages | INTRONICS Intronics Power, Inc. |  | | |
FourwireKelvinleadmeasurements 文件：933.59 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
INTERCONNECTS.100??Grid(.018??dia.)PinsSMTGullWingHeaders&SocketsSingleandDoubleRow 文件：199.28 Kbytes Page：1 Pages | MILL-MAX Mill-Max Manufacturing Corp. |  | |
IRFU310产品属性
- 类型
描述
- 型号
IRFU310
- 功能描述
MOSFET N-Chan 400V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
07+ |
TO-252 |
100000 |
||||
VISHAY |
1923+ |
TO-251 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
IR |
23+ |
TO251 |
10000 |
公司只做原装正品 |
|||
VISHAY/威世 |
19+ |
I-PAK(TO-251) |
23025 |
正规报关原装现货系列订货技术支持 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-251-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VISHAY/威世 |
21+ |
TO-251 |
60000 |
绝对原装正品现货,假一罚十 |
|||
IR |
2020+ |
TO-251 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Vishay Siliconix |
24+ |
TO-251AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VishaySiliconix |
2019+ |
TO-251-3ShortLeads |
65500 |
IPak |
|||
VBSEMI/台湾微碧 |
TO-251 |
265209 |
假一罚十原包原标签常备现货! |
IRFU310芯片相关品牌
IRFU310规格书下载地址
IRFU310参数引脚图相关
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- IRFS750
- IRFS740
- IRFS730
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- IRFS654
- IRFS641
- IRFS640
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2019-11-1
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