Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.)

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Unifor

POWER RECTIFIERS(3.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECIFITERS 3.0 AMPERES 500 -- 1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

Voltage Follower

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Voltage Follower

文件：348.91 Kbytes Page：16 Pages