IRFU024价格

参考价格:¥0.9759

型号:IRFU024NPBF 品牌:International 备注:这里有IRFU024多少钱,2025年最近7天走势,今日出价,今日竞价,IRFU024批发/采购报价,IRFU024行情走势销售排行榜,IRFU024报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU024

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignedwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRF
IRFU024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFU024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRFR024,SiHFR024) •Straightlead(IRFU024,SiHFU024) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFU024

iscN-ChannelMOSFETTransistor

文件:345.23 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFU024

PowerMOSFET

文件:1.16522 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFU024

PowerMOSFET

文件:1.16522 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFU024

PowerMOSFET

文件:1.04466 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

iscN-ChannelMOSFETTransistor

文件:397.89 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

文件:178.33 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

IscN-ChannelMOSFETTransistor

文件:319.75 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

UltraLowOn-Resistance

文件:406.05 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

UltraLowOn-Resistance

文件:4.00212 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:1.16522 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:1.06651 Mbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PISTONSEALS

DESCRIPTION TheBECA024profileisadoubleacting compositepistonsealcomposedofa profiledrubberringandafilledPTFE orPOMback-upring.Itmeetsthe standardsMIL-G-5514FandAS4716. APPLICATIONS Actuators Brakessystems Flightcontrols Enginesystems Landinggear

FRANCEJOINT

France Joint

FRANCEJOINT

LowPower,5MBdDigitalCMOSOptocoupler

Description ACPL-M21L(singlechannelSO-5package),ACPL-021L(singlechannelSO-8package)andACPL-024L(dualchannelSO-8package)areoptically-coupledlogicgates.ThedetectorIChasCMOSoutputstageandopticalreceiverinputstagewithbuilt-inSchmitttriggertoprovidelogic-compatibl

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AVAGO

PCboardmountinganddirectinsertmountingavailable

文件:1.60394 Mbytes Page:3 Pages

HUAXINANHuaXinAn Electronics CO.,LTD

华兴安深圳市华兴安电子有限公司

HUAXINAN

LowPower,5-MBdDigitalCMOSOptocoupler

文件:721.15 Kbytes Page:16 Pages

BOARDCOMBroadcom Corporation.

博通公司博通半导体

BOARDCOM

LowPower,5-MBdDigitalCMOSOptocoupler

文件:721.15 Kbytes Page:16 Pages

BOARDCOMBroadcom Corporation.

博通公司博通半导体

BOARDCOM

IRFU024产品属性

  • 类型

    描述

  • 型号

    IRFU024

  • 功能描述

    MOSFET N-Chan 60V 14 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-7-23 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-251
50000
全新原装正品现货,支持订货
IR
23+
TO-251
8560
受权代理!全新原装现货特价热卖!
Vishay Siliconix
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
IR
24+
TO-251
20540
保证进口原装现货假一赔十
INFINEON/英飞凌
2021+
TO-251
9000
原装现货,随时欢迎询价
IR
23+
TO-251
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
TO-251
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
24+
TO-251
6
只做原厂渠道 可追溯货源
IR/VISHAY
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
2025+
TO-251
5425
全新原厂原装产品、公司现货销售

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