HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

isc N-Channel MOSFET Transistor

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Power MOSFET

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Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

Power MOSFET

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Power MOSFET

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

isc N-Channel MOSFET Transistor

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Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??

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Isc N-Channel MOSFET Transistor

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采用 I-Pak 封装的 55V 单 N 通道功率 MOSFET

Ultra Low On-Resistance

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Ultra Low On-Resistance

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Power MOSFET

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Power MOSFET

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PISTON SEALS

DESCRIPTION The BECA 024 profile is a double acting composite piston seal composed of a profiled rubber ring and a filled PTFE or POM back-up ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine systems Landing gear

Low Power, 5 MBd Digital CMOS Optocoupler

Description ACPL-M21L (single channel SO-5 package), ACPL-021L (single channel SO-8 package) and ACPL-024L (dual channel SO-8 package) are optically-coupled logic gates. The detector IC has CMOS output stage and optical receiver input stage with built-in Schmitt trigger to provide logic-compatibl

PC board mounting and direct insert mounting available

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Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages

Low Power, 5-MBd Digital CMOS Optocoupler

文件：721.15 Kbytes Page：16 Pages