HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a

HEXFET짰Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

采用 TO-262 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

High Efficiency Synchronous Rectification in SMPS

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7-bit Futurebus transceiver

DESCRIPTION The FB2041 is a 7-bit bidirectional BTL transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. The FB2041 is an inverting transceiver. The B-port drivers are Low-capacitance open collectors with controlled ramp and are designed to sink

DC/DC Converter Applications

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay drivers,

DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

TOPFET dual high side switch

DESCRIPTION Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount package. FEATURES • Vertical power TrenchMOS • Low on-state resistance • CMOS logic compatible • Very low quiescent current • Overtemperature protection • L

FREQUENCY DOWN CONVERTER FOR VHF TO UHF BAND RECEIVER

DESCRIPTION The µPC3207GR is a Silicon monolithic IC designed for receiver applications. This IC consists of a double balanced mixer (DBM), local oscillator, preamplifier for precscaler operation, IF amplifier, regulator, UHF/VHF switching circuit, and so on. This one-chip IC covers a wide freq