500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET/场效应管

isc N-Channel MOSFET Transistor

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N-CHANNEL MOSFET in a TO-220F Plastic Package

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Advanced Power MOSFET

BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 mA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 W (Typ.)

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Advanced Power MOSFET

isc Silicon NPN Power Transistor

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Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

8A 500V N-channel Enhancement Mode Power MOSFET

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9Amps竊?00V N-CHANNEL MOSFET

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8A竊?00V N-CHANNEL MOSFET

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8A 500V N-CHANNEL MOSFET

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