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IRFS59N10价格
参考价格：￥7.5988
型号：IRFS59N10DPBF 品牌：International 备注：这里有IRFS59N10多少钱，2026年最近7天走势，今日出价，今日竞价，IRFS59N10批发/采购报价，IRFS59N10行情走势销售排行榜，IRFS59N10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● UPS / Motor Control Invert | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：188.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
采用 D2-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● UPS / Motor Control Invert | IRF | |
IRFS59N10产品属性
- 类型
描述
- 型号
IRFS59N10
- 制造商
International Rectifier
- 功能描述
MOSFET N D2-PAK
- 制造商
International Rectifier
- 功能描述
N CHANNEL MOSFET, 100V, 59A, D2-PAK, Transistor
- Polarity
N Channel, Continuous D
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-263 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
20+ |
TO-263 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
TO-263 |
60000 |
||||
Infineon/英飞凌 |
2025+ |
D2PAK |
8000 |
||||
IR |
NEW |
TO-263 |
18689 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
Infineon/英飞凌 |
24+ |
D2PAK |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
13+ |
TO-263 |
9258 |
原装分销 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2526+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
IRFS59N10芯片相关品牌
IRFS59N10规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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