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IRFB59N10DPBF价格
参考价格：￥5.7881
型号：IRFB59N10DPBF 品牌：International 备注：这里有IRFB59N10DPBF多少钱，2024年最近7天走势，今日出价，今日竞价，IRFB59N10DPBF批发/采购报价，IRFB59N10DPBF行情走势销售排行榜，IRFB59N10DPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB59N10DPBF | HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFB59N10DPBF | HighfrequencyDC-DCconverters 文件：233.27 Kbytes Page：12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRFB59N10DPBF | N-Channel100-V(D-S)MOSFET 文件：981.72 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A) Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HighfrequencyDC-DCconverters 文件：233.27 Kbytes Page：12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A) Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFB59N10DPBF产品属性
- 类型
描述
- 型号
IRFB59N10DPBF
- 功能描述
MOSFET MOSFT 100V 59A 25mOhm 76nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+23+ |
TO-220 |
3370 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
INTERNATIONA |
22+ |
NA |
5000 |
绝对全新原装现货 |
|||
IR |
23+ |
TO-220-3 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Infineon(英飞凌) |
23+ |
TO-220 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
23+ |
TO-220AB |
8238 |
||||
INFINEON/英飞凌 |
21+ |
TO-220 |
5590 |
只做原装正品假一赔十!正规渠道订货! |
|||
Infineon |
2023 |
6500 |
公司原装现货/支持实单 |
||||
INFINEON/IR |
22+ |
NA |
10000 |
绝对全新原装现货热卖 |
|||
IR |
23+ |
TO-220AB |
5000 |
原装正品,假一罚十 |
|||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
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IRFB59N10DPBF规格书下载地址
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱：yulin522@126.com0755-8320005015817287769柯先生
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DdatasheetPDF页码索引
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