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IRFB59N10DPBF价格
参考价格：￥5.7881
型号：IRFB59N10DPBF 品牌：International 备注：这里有IRFB59N10DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB59N10DPBF批发/采购报价，IRFB59N10DPBF行情走势销售排行榜，IRFB59N10DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB59N10DPBF | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● UPS / Motor Control Invert | IRF |   | |
IRFB59N10DPBF | High frequency DC-DC converters 文件：233.27 Kbytes Page：12 Pages | IRF | | |
IRFB59N10DPBF | N-Channel 100-V (D-S) MOSFET 文件：981.72 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
High frequency DC-DC converters 文件：233.27 Kbytes Page：12 Pages | IRF | | ||
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFB59N10DPBF产品属性
- 类型
描述
- 型号
IRFB59N10DPBF
- 功能描述
MOSFET MOSFT 100V 59A 25mOhm 76nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
24+ |
TO-220-3 |
3765 |
||||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRFB59N10DPBF即刻询购立享优惠#长期有排单订 |
|||
IR |
23+ |
TO-220AB |
65400 |
||||
IR |
25+ |
TO-220AB |
3000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
12+ |
TO-220 |
106 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon/英飞凌 |
2023+ |
TO220 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
INFINEON |
25+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
NEW |
TO-220AB |
8238 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRFB59N10DPBF芯片相关品牌
IRFB59N10DPBF规格书下载地址
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DdatasheetPDF页码索引
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