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IRFB59N10DPBF价格
参考价格：￥5.7881
型号：IRFB59N10DPBF 品牌：International 备注：这里有IRFB59N10DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB59N10DPBF批发/采购报价，IRFB59N10DPBF行情走势销售排行榜，IRFB59N10DPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB59N10DPBF | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● UPS / Motor Control Invert | IRF International Rectifier |  |   |
IRFB59N10DPBF | High frequency DC-DC converters 文件：233.27 Kbytes Page：12 Pages | IRF International Rectifier | | |
IRFB59N10DPBF | N-Channel 100-V (D-S) MOSFET 文件：981.72 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF International Rectifier | | | |
High frequency DC-DC converters 文件：233.27 Kbytes Page：12 Pages | IRF International Rectifier | | | |
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF International Rectifier | | | |
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFB59N10DPBF产品属性
- 类型
描述
- 型号
IRFB59N10DPBF
- 功能描述
MOSFET MOSFT 100V 59A 25mOhm 76nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3370 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRFB59N10DPBF即刻询购立享优惠#长期有排单订 |
|||
Infineon/英飞凌 |
23+ |
TO220 |
12700 |
买原装认准中赛美 |
|||
IR |
12+ |
TO-220 |
106 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
||||
IFX |
24+ |
N/A |
5000 |
十年沉淀唯有原装 |
|||
Infineon/英飞凌 |
21+ |
TO220 |
6820 |
只做原装,质量保证 |
|||
I |
25+ |
TOTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
TO-220AB |
65400 |
||||
INTERNATIONA |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
IRFB59N10DPBF芯片相关品牌
IRFB59N10DPBF规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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DdatasheetPDF页码索引
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