N-Channel Enhancement Mode MOSFET

Description The IRFR3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 30A RDS(ON)

采用 D-Pak 封装的 100V 单 N 通道 IR MOSFET

Low Gate-to-Drain Charge to Reduce Switching Losses

文件：1.80795 Mbytes Page：8 Pages

High frequency DC-DC converters

文件：923.54 Kbytes Page：10 Pages

Power MOSFET

文件：140.57 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

文件：336.37 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：228.12 Kbytes Page：10 Pages

High frequency DC-DC converters

文件：237.27 Kbytes Page：11 Pages

High frequency DC-DC converters

文件：237.27 Kbytes Page：11 Pages

High frequency DC-DC converters

文件：237.27 Kbytes Page：11 Pages

High frequency DC-DC converters

文件：3.8536 Mbytes Page：11 Pages

High frequency DC-DC converters

文件：3.85436 Mbytes Page：10 Pages

High frequency DC-DC converters

文件：237.27 Kbytes Page：11 Pages

High frequency DC-DC converters

文件：237.27 Kbytes Page：11 Pages

N-Channel 100-V (D-S) MOSFET

文件：1.02269 Mbytes Page：8 Pages

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Round Snap-In Aluminum Electrolytic Capaci-

文件：243.67 Kbytes Page：5 Pages