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IRFR3303价格
参考价格：￥2.6735
型号：IRFR3303PBF 品牌：IR 备注：这里有IRFR3303多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR3303批发/采购报价，IRFR3303行情走势销售排行榜，IRFR3303报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR3303 | HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRFR3303 | HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | |
IRFR3303 | 采用 D-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
ULTRA LOW ON RESISTANCE 文件：256.459 Kbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：256.459 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：6.23075 Mbytes Page：10 Pages | KERSEMI | | ||
Ultra Low On-Resistance 文件：256.459 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：256.459 Kbytes Page：11 Pages | IRF | | ||
Nylon Cable Clamps 文件：84.39 Kbytes Page：1 Pages | HEYCO | | ||
Trimmer 文件：124.57 Kbytes Page：2 Pages | BOURNS 伯恩斯 | | ||
Heyco짰 Nylon Cable Clamps 文件：100.33 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
60 - 200 WATTS LINEAR 文件：91.04 Kbytes Page：1 Pages | POWERBOX | | ||
Floor socket: 3303E 文件：272.42 Kbytes Page：1 Pages | BURLAND | |
IRFR3303产品属性
- 类型
描述
- 型号
IRFR3303
- 功能描述
MOSFET N-CH 30V 33A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO252 |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEON |
21+ |
TO-252 |
16979 |
||||
IR |
19+ |
TO-252 |
16319 |
||||
IR |
25+23+ |
TO-252 |
38210 |
绝对原装正品全新进口深圳现货 |
|||
IR |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
IR |
25+ |
N/A |
4226 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IRFR3303TRL |
25+ |
3001 |
3001 |
||||
IR |
26+ |
D-PAK |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
25+ |
SOT252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
IRFR3303芯片相关品牌
IRFR3303规格书下载地址
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IRFR3303数据表相关新闻
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2019-8-20
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