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IRFR310价格
参考价格：￥1.9500
型号：IRFR310BTM 品牌：FAIRCHILD 备注：这里有IRFR310多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR310批发/采购报价，IRFR310行情走势销售排行榜，IRFR310报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
| IRF |   | |
IRFR310 | Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | |
IRFR310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR310 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc | VishayVishay Siliconix 威世科技 | | |
IRFR310 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFR310 | iscN-Channel MOSFET Transistor 文件：332.27 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc | VishayVishay Siliconix 威世科技 | | ||
Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | KERSEMI | | ||
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
MOSFET N-CH 400V 1.7A DPAK | Infineon 英飞凌 | | ||
MOSFET N-CH 400V 1.7A DPAK | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor 文件：321.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：321.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：2.0329 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=3.6廓 , ID=1.7A ) 文件：1.80909 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：1.12245 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：835 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | ||
Ultra Low Bias Current Varactor Bridge Operational Amplifiers 文件：984.54 Kbytes Page：5 Pages | INTRONICS | | ||
Four wire Kelvin lead measurements 文件：933.59 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
INTERCONNECTS .100??Grid (.018??dia.) Pins SMT Gull Wing Headers & Sockets Single and Double Row 文件：199.28 Kbytes Page：1 Pages | MILL-MAX | | ||
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SCREW TYPE SERIES 文件：382.28 Kbytes Page：1 Pages | DBLECTRO | |
IRFR310产品属性
- 类型
描述
- 型号
IRFR310
- 功能描述
MOSFET N-Chan 400V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4026 |
原装现货,当天可交货,原型号开票 |
|||
FSC |
2016+ |
TO-252 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
23+ |
TO252 |
20000 |
全新原装假一赔十 |
|||
FAIRCHI |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FAIRCHILD |
NEW |
TO-252 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY/威世 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
TO 252 |
161027 |
明嘉莱只做原装正品现货 |
|||
VISHAY(威世) |
2024+ |
D-Pak |
500000 |
诚信服务,绝对原装原盘 |
|||
IR |
02+ |
TO-252 |
2238 |
深圳原装进口现货 |
IRFR310芯片相关品牌
IRFR310规格书下载地址
IRFR310参数引脚图相关
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- IRFR310TRLPBF
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- IRFR24N15DTRPBF
- IRFR24N15DPBF
- IRFR2407TRPBF
- IRFR2407TRLPBF
- IRFR2407PBF
- IRFR2405TRPBF-CUTTAPE
- IRFR2405TRPBF
- IRFR2405TRLPBF
- IRFR2405PBF
- IRFR2307ZTRLPBF
- IRFR2307ZPBF
- IRFR230
- IRFR224TRPBF
- IRFR224TRLPBF
- IRFR224PBF
- IRFR224
- IRFR220TRRPBF
- IRFR220TRPBF
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
IRFR310数据表相关新闻
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2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
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2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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