IRFR310价格

参考价格:¥1.9500

型号:IRFR310BTM 品牌:FAIRCHILD 备注:这里有IRFR310多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR310批发/采购报价,IRFR310行情走势销售排行榜,IRFR310报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR310

Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)

IRF

IRFR310

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

IRFR310

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

IRFR310

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

IRFR310

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc

VishayVishay Siliconix

威世威世科技公司

IRFR310

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFR310

iscN-Channel MOSFET Transistor

文件:332.27 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc

VishayVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.)

Fairchild

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

KERSEMI

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Fairchild

仙童半导体

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

KERSEMI

MOSFET N-CH 400V 1.7A DPAK

Infineon

英飞凌

MOSFET N-CH 400V 1.7A DPAK

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件:321.88 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:321.88 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:2.0329 Mbytes Page:9 Pages

VBSEMI

微碧半导体

HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=3.6廓 , ID=1.7A )

文件:1.80909 Mbytes Page:10 Pages

IRF

Power MOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.12245 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:835 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:984.54 Kbytes Page:5 Pages

INTRONICS

Four wire Kelvin lead measurements

文件:933.59 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

INTERCONNECTS .100??Grid (.018??dia.) Pins SMT Gull Wing Headers & Sockets Single and Double Row

文件:199.28 Kbytes Page:1 Pages

MILL-MAX

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:50.19 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SCREW TYPE SERIES

文件:382.28 Kbytes Page:1 Pages

DBLECTRO

IRFR310产品属性

  • 类型

    描述

  • 型号

    IRFR310

  • 功能描述

    MOSFET N-Chan 400V 1.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 15:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2025+
TO252
3872
全新原厂原装产品、公司现货销售
23+
TO-252
65480
VISHAY
23+
TO-252
20000
VISHAY
24+
TO-252
8000
原厂原装,价格优势,欢迎洽谈!
IR
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
FSC
25+23+
TO-252
15759
绝对原装正品全新进口深圳现货
VISHAY/威世
2023+
TO-252
46588
原厂全新正品旗舰店优势现货
VISHAY/威世
25+
TO-252
2500
全新原装正品支持含税
FAIRCHI
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY/威世
23+
TO252
918575
原厂授权一级代理,专业海外优势订货,价格优势、品种

IRFR310数据表相关新闻