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IRFR224TRL价格
参考价格:¥4.2738
型号:IRFR224TRLPBF 品牌:VISHAY 备注:这里有IRFR224TRL多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR224TRL批发/采购报价,IRFR224TRL行情走势销售排行榜,IRFR224TRL报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR224TRL | Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | VishayVishay Siliconix 威世威世科技公司 | ||
IRFR224TRL | Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str | KERSEMI | |||
Power MOSFET 文件:368.2 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY RECTIFIER 125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals | SMCDIODE 桑德斯微电子 | |||
Mini 7/8 Male Internal Threads 5 Pin Field Attachable 文件:199.12 Kbytes Page:2 Pages | ALPHAWIRE | |||
Axial Lead and Cartridge Fuses - Subminiature Glass Body 文件:45.23 Kbytes Page:1 Pages | Littelfuse 力特 | |||
SMK FEMALE TO SMK FEMALE STRAIGHT ADAPTER 文件:178.55 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Guard ring for enhanced ruggedness and long term reliability 文件:209.34 Kbytes Page:4 Pages | SMC 桑德斯微电子 |
IRFR224TRL产品属性
- 类型
描述
- 型号
IRFR224TRL
- 功能描述
MOSFET N-Chan 250V 3.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
11800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
10+ |
TO-252 |
3900 |
||||
VISHAY |
25+23+ |
TO-252 |
28920 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
23+ |
TO252 |
7000 |
||||
VISHAY(威世) |
2447 |
TO-252-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
VISHAY |
1923+ |
D-PAK |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
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IRFR224TRL规格书下载地址
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IRFR224TRL数据表相关新闻
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs,Id) 235mΩ 10V,8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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