250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.8A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Mini 7/8 Male Internal Threads 5 Pin Field Attachable

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Axial Lead and Cartridge Fuses - Subminiature Glass Body

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Guard ring for enhanced ruggedness and long term reliability

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