N-Channel Enhancement Mode MOSFET

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=180A,RDS(ON)

100V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-247 封装

N-Channel MOSFET Transistor

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HEXFET Power MOSFET

VDSS 100V RDS(on) typ. 3.7mΩ max. 4.5mΩ ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Aplications

High Efficiency Synchronous Rectification in SMPS

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High Efficiency Synchronous Rectification in SMPS

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RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4110 family of frequency synthesizers can be used to implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. They consist of a low noise digital PFD (phase frequency detector), a precision charge pump, a progra

300 MHz to 1000 MHz Quadrature Modulator

GENERAL DESCRIPTION The ADL5370 is the first in the fixed-gain quadrature modulator (F-MOD) family designed for use from 300 MHz to 1000 MHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication sy

Relampable Socket

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SYSDRIVE 3G3HV Series

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true one-port, surface-acoustic-wave (SAW) resonator

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