11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A)

DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Isolated central mounting hole;

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A)

11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

Power MOSFET

文件：1.58564 Mbytes Page：11 Pages

Power MOSFET

文件：1.53122 Mbytes Page：8 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast

Power MOSFET

文件：1.58564 Mbytes Page：11 Pages

isc N-Channel MOSFET Transistor

文件：67.84 Kbytes Page：2 Pages

Power MOSFET

文件：1.58564 Mbytes Page：11 Pages

Power MOSFET

文件：1.53122 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：67.85 Kbytes Page：2 Pages

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THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS

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