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IRFP27N60K价格
参考价格：￥22.4122
型号：IRFP27N60KPBF 品牌：VISHAY 备注：这里有IRFP27N60K多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP27N60K批发/采购报价，IRFP27N60K行情走势销售排行榜，IRFP27N60K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP27N60K | Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) HEXFET® Power MOSFET Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Enhanced Body Diode dv/dt Capability Applications Hard Switch | IRF |   | |
IRFP27N60K | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.22Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFP27N60K | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP27N60K | Power MOSFET 文件：214.44 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP27N60K | Power MOSFET 文件：156.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP27N60K | Power MOSFET 文件：191.88 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP27N60K | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFP27N60K | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Enhanced Body Diode dv/dt Capability Applications ● Hard Switching Primary or PFC Switch ● Switch M | IRF | | ||
Power MOSFET 文件：191.88 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：214.44 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：156.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：214.44 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFP27N60K产品属性
- 类型
描述
- 型号
IRFP27N60K
- 功能描述
MOSFET N-Chan 600V 27 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2450+ |
TO-247-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
VISHAY |
TO-247 |
50000 |
|||||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY |
NA |
23500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY/威世 |
25+ |
TO-247 |
22000 |
原装现货假一罚十 |
|||
VISHAY |
23+ |
TO-247 |
20000 |
||||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
IR |
NEW |
TO-247 |
9562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
25+23+ |
TO-247-3 |
29565 |
绝对原装正品全新进口深圳现货 |
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IRFP27N60K规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-26
DdatasheetPDF页码索引
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