Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Standard Power MOSFET - N-Channel Enhancement Mode

Features • International standard package JEDEC TO-247 AD • Low RDS (on)HDMOS™ process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

HEXFET® Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- ctiveness. The TO-247 package preferred for commercial-industrial applications where higher power levels pr

N-Channel: Standard Power MOSFETs

Power MOSFET

iscN-Channel MOSFET Transistor

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Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

HEXFET® Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- ctiveness. The TO-247 package preferred for commercial-industrial applications where higher power levels pr

N-Channel MOSFET Transistor

· DESCRITION · High Speed Power Switching · FEATURES · Static drain-source on-resistance: RDS(on)≤40mΩ · Enhancement mode: · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation

HEXFET짰 Power MOSFET

VDSS = 200V RDS(on) = 0.04Ω ID = 50A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET P

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤40mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Ease of paralleling • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels pre

Power MOSFET

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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采用 TO-247 封装的 200V 单 N 沟道功率 MOSFET

Advanced Process Technology

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Advanced Process Technology

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Power MOSFET

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2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

DC-DC Converters 50 to 200 Watts

Product Highlights The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2 MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliabili

Square Type

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Square Type

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