Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤40mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-247 封装的 200V 单 N 沟道功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Ease of paralleling • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Advanced Process Technology

文件：186.11 Kbytes Page：8 Pages

Advanced Process Technology

文件：186.11 Kbytes Page：8 Pages

1/4 COMMERCIAL PHONE PLUGS

1/4 COMMERCIAL PHONE PLUGS

Wiha Soft Grip PicoFinish Precision Screwdrivers

文件：313.55 Kbytes Page：1 Pages

One-Part, General Purpose Epoxy Powder Resin

文件：55.52 Kbytes Page：2 Pages

USB cable ‐ A/MiniB ‐ 3ft

文件：177.6 Kbytes Page：1 Pages

Plugs IP 44 and IP 67

文件：1.19572 Mbytes Page：2 Pages