20A, 200V, 0.180 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclu

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.18Ω (Max) • Fast Switching

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

20A, 200V, 0.180 Ohm, N-Channel Power MOSFET

200V N-Channel Power MOSFET

Power MOSFET

Power MOSFET

文件：1.63401 Mbytes Page：11 Pages

Power MOSFET

文件：1.61145 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：322.74 Kbytes Page：2 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18Ω ID = 20 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA(Max.) @ VDS = 200V Lower RDS(ON) : 0.144Ω(Typ.)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance: RDS(on) = 0.18Ω(Max) ·Fast Switching

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

HEXFET짰 Power MOSFET

. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A Lead-Free

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclu

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching

Power MOSFET

文件：1.61145 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：322.74 Kbytes Page：2 Pages

Power MOSFET

文件：1.63401 Mbytes Page：11 Pages

Power MOSFET

文件：1.63401 Mbytes Page：11 Pages

Direct replacement for BA15d

文件：202.07 Kbytes Page：4 Pages

MINIATURE FUSES - 5x25mm

文件：79.03 Kbytes Page：2 Pages

5x25mm MINIATURE FUSES

文件：79.32 Kbytes Page：2 Pages

240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages

240W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.06087 Mbytes Page：5 Pages