Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)

Applications Switch Mode Power Supply (SMPS) UninterruptIble Power Supply High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power S

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23廓 , ID = 22A )

Applications Switch Mode Power Supply (SMPS) UninterruptIble Power Supply High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cur

SMPS MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

Power MOSFET

文件：342.34 Kbytes Page：11 Pages

Power MOSFET

文件：319.79 Kbytes Page：9 Pages

Power MOSFET

Power MOSFET

文件：319.79 Kbytes Page：9 Pages

Power MOSFET

文件：342.34 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT） 描述：MOSFET N-CH 650V 22A TO247-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

Power MOSFET

SMPS MOSFET