IRFP17N50价格

参考价格:¥15.7916

型号:IRFP17N50LPBF 品牌:Vishay 备注:这里有IRFP17N50多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP17N50批发/采购报价,IRFP17N50行情走势销售排行榜,IRFP17N50报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Ap

IRF

Power MOSFET

FEATURES • SuperFast Body Diode Eliminates the Need    For External Diodes in ZVS Applications • Low Gate Charge Results in Simple Drive    Requirement • Enhanced dV/dt Capabilities Offer Improved    Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast body diode eliminates the need for external diodes in ZVS applications • Low gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorization

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast body diode eliminates the need for external diodes in ZVS applications • Low gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorization

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast Body Diode Eliminates the Need    For External Diodes in ZVS Applications • Low Gate Charge Results in Simple Drive    Requirement • Enhanced dV/dt Capabilities Offer Improved    Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Ap

IRF

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

Infineon

英飞凌

iscN-Channel MOSFET Transistor

文件:444.83 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:212.31 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:212.31 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:212.31 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

MOS(场效应管)

VishayVishay Siliconix

威世威世科技公司

SMPS MOSFET HEXFET짰Power MOSFET

文件:188.08 Kbytes Page:8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

Infineon

英飞凌

N-CHANNEL POWER MOSFET

文件:192.6 Kbytes Page:5 Pages

UTC

友顺

iscN-Channel MOSFET Transistor

文件:328.89 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:291.5 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:145.61 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

文件:82.96 Kbytes Page:8 Pages

IRF

IRFP17N50产品属性

  • 类型

    描述

  • 型号

    IRFP17N50

  • 功能描述

    MOSFET N-Chan 500V 16 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-30 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3271
原装现货,当天可交货,原型号开票
VISHAY/威世
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
25+
TO-247
54648
百分百原装现货 实单必成 欢迎询价
VISHAY/威世
25+
TO-247
20300
VISHAY/威世原装特价IRFP17N50L即刻询购立享优惠#长期有货
IR
25+
TO-3P
18000
原厂直接发货进口原装
VISHAY
24+/25+
TO-247AC
1900
原装正品现货库存价优
VISHAY/威世
22+
N/A
12245
现货,原厂原装假一罚十!
VISHAY
24+
NA
35000
只做原装正品现货 欢迎来电查询15919825718
IR
NEW
TO-247
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
VISHAY/威世
20+
SMD
880000
明嘉莱只做原装正品现货

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