44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance -rDS(ON)= 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc N-Channel MOSFET Transistor

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HEXFET Power MOSFET

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100V,60A Heatsink N-Channel Type Power MOSFET

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44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Easy Identification and Tracing with 10-color Cable

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MINIATURE FUSES - 5x15 mm

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Limiting continuous current 130A at 85째C

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INTERCONNECT BATTERY HOLDERS

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