位置：首页 > IC中文资料第3556页 > IRFNG40
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFNG40 | POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A) RDS(on) 3.5Ω ID 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish | IRF |   | |
IRFNG40 | HiRel MOSFETs \n优势:; | INFINEON 英飞凌 | | |
IRFNG40 | Simple Drive Requirements 文件：502.49 Kbytes Page：7 Pages | IRF | | |
Simple Drive Requirements 文件：502.49 Kbytes Page：7 Pages | IRF | |
IRFNG40产品属性
- 类型
描述
- 型号
IRFNG40
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 1KV 3.9A 3SMD-1 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
SMD-1 |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
SMD-1 |
7000 |
||||
IR |
22+ |
SMD-1 |
6000 |
终端可免费供样,支持BOM配单 |
IRFNG40芯片相关品牌
IRFNG40规格书下载地址
IRFNG40参数引脚图相关
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2019-11-4
DdatasheetPDF页码索引
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