POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)

RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establ

POWER MOSFET SURFACE MOUNT(SMD-1)

RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establ

HiRel MOSFETs

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Simple Drive Requirements

文件：185.29 Kbytes Page：7 Pages

Simple Drive Requirements

文件：185.29 Kbytes Page：7 Pages

High Voltage Transistors

High Voltage Transistors PNP Silicon

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • HF and IF stages in radio receivers • Mixer stages in AM receivers.

Single Supply, Low-Power, High Output, Current Feedback Amplifier

文件：203.25 Kbytes Page：12 Pages

Single Supply, Low-Power, High Output, Current Feedback Amplifier

文件：203.25 Kbytes Page：12 Pages

Square Type

文件：31.83 Kbytes Page：1 Pages