POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)

RDS(on) 0.020 Ω ID 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-estab

Simple Drive Requirements

文件：219.49 Kbytes Page：7 Pages

HiRel MOSFETs

N-CHANNEL POWER MOSFET

VDSS 60V ID(cont) 45A RDS(on) 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

Simple Drive Requirements

文件：219.49 Kbytes Page：7 Pages

Single channel high reliability power MOSFETs

MOSFETs and JFETs

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Schottky Barrier Diode

文件：38.96 Kbytes Page：2 Pages

Schottky Barrier Diode

文件：49.58 Kbytes Page：2 Pages

Schottky Barrier Diode

文件：50.13 Kbytes Page：2 Pages