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IRFL110价格

参考价格:¥1.0701

型号:IRFL110PBF 品牌:VISHAY 备注:这里有IRFL110多少钱,2026年最近7天走势,今日出价,今日竞价,IRFL110批发/采购报价,IRFL110行情走势销售排行榜,IRFL110报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFL110

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

VISHAYVishay Siliconix

威世威世科技公司

IRFL110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

IRF

IRFL110

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

VISHAYVishay Siliconix

威世威世科技公司

IRFL110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

INFINEON

英飞凌

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:2.02105 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:2.02105 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:2.02105 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS

MOSPEC

统懋

IRFL110产品属性

  • 类型

    描述

  • 型号

    IRFL110

  • 功能描述

    MOSFET N-Chan 100V 1.5 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-14 17:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
英飞凌
23+
N/A
10000
正规渠道,只有原装!
VISHAY
24+
N/A
39800
原装正品现货支持实单
VISHAY/威世
2025+
SOT-223
3773
原装进口价格优 请找坤融电子!
IR
25+
SOT-223
25000
全新原装现货,假一赔十
IR
22+
原厂封装
15850
原装正品,实单请联系
VISHAY
2430+
SOT-223
8540
只做原装正品假一赔十为客户做到零风险!!
IR
19+
SOT-223
16000
IR
2007
SOT223
26
原装
VISHAY
2021+
SOT-223
9450
原装现货。
VISHAY/威世
25+
SOT-223
35666
VISHAY/威世全新特价IRFL110TRPBF即刻询购立享优惠#长期有货

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