250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

250V N-Channel MOSFET

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

POWER MOSFET

Through-Hole Packags TO-220 FullPak (Fully Isolated)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

Power MOSFET

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POWER MOSFET

Power MOSFET

文件：1.38223 Mbytes Page：10 Pages

MOSFET N-CH250V HEXFET MOSFET

Power MOSFET

文件：1.38223 Mbytes Page：10 Pages

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational