5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

MOSFETs and JFETs

HiRel MOSFETs

N-CHANNEL ENHANCEMENT

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Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

Modular Radio Telemetry System

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MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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1/4 FLAT PLUG PHONE PLUGS

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