IRFDC20价格

参考价格:¥2.9034

型号:IRFDC20PBF 品牌:Vishay 备注:这里有IRFDC20多少钱,2025年最近7天走势,今日出价,今日竞价,IRFDC20批发/采购报价,IRFDC20行情走势销售排行榜,IRFDC20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFDC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)

VDSS = 600V RDS(on) = 4.4Ω ID = 0.32A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

IRF

IRFDC20

Power MOSFET

VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

VishayVishay Siliconix

威世威世科技公司

IRFDC20

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

VishayVishay Siliconix

威世威世科技公司

IRFDC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:413.4 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFDC20产品属性

  • 类型

    描述

  • 型号

    IRFDC20

  • 功能描述

    MOSFET N-Chan 600V 0.32 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-25 15:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
DIP4
3652
全新原装正品支持含税
INTERNATIONA
05+
原厂原装
4241
只做全新原装真实现货供应
Vishay Siliconix
22+
4DIP
9000
原厂渠道,现货配单
TT/OPTEK
25+
NA
10000
全新原装正品、可开增票、可溯源、一站式配单
VISHAY(威世)
24+
HVMDIP-4
9555
支持大陆交货,美金交易。原装现货库存。
IR
三年内
1983
只做原装正品
VISHAY(威世)
2447
DIP-4
115000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
IR
23+
DIP-4
8000
只做原装现货
IR
23+
DIP-4
7000
IR
24+
LCC
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

IRFDC20数据表相关新闻