1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • En

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Features • 1.0A, 100V • rDS(ON) = 0.6W • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

Power MOSFET

• Dynamic dv/dt rating\n• Repetitive avalanche rated\n• For automatic Insertion;

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

Power MOSFET

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High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9123 is a Switch Mode Power Supply (SMPS) controller subsystem that can start and run directly from almost any DC input, from a 12V battery to a rectified and filtered 240VAC line. It contains all the elements required to build a single-switch converter except

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9123 is a Switch Mode Power Supply (SMPS) controller subsystem that can start and run directly from almost any DC input, from a 12V battery to a rectified and filtered 240VAC line. It contains all the elements required to build a single-switch converter except

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9123 is a Switch Mode Power Supply (SMPS) controller subsystem that can start and run directly from almost any DC input, from a 12V battery to a rectified and filtered 240VAC line. It contains all the elements required to build a single-switch converter except

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9123 is a Switch Mode Power Supply (SMPS) controller subsystem that can start and run directly from almost any DC input, from a 12V battery to a rectified and filtered 240VAC line. It contains all the elements required to build a single-switch converter except

1:10 LVCMOS FANOUT BUFFER

The MPC9120 is a 1:10 LVCMOS fanout buffer targeted to support Intel based Pentium II microprocessor chip sets. The device features 10 low skew outputs optimized to drive the clock inputs of standard unbuffered SO–DIMM SDRAM modules. Standard unbuffered SO–DIMM SDRAM modules require two clocks pe