1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • En

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Features • 1.0A, 100V • rDS(ON) = 0.6W • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Power MOSFET

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

Power MOSFET

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INSTRUMENTATION HANDLES

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages