1-WATT RATED POWER MOSFETs

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • -0.6A and -07A, -80V and -100V • rDS(ON) =

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

SHIELDED ADJUSTABLE RF COILS

[J.W.MILLER]

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

Isolated, Sigma-Delta ADCs with SPI

FEATURES ► 2 (ADE9112) or 3 (ADE9113) channel isolated, simultaneously sampling Σ-Δ ADCs, with integrated isoPower, isolated dc-to-dc converters ► 3 (ADE9103) channel nonisolated, simultaneously sampling Σ-Δ ADCs ► Synchronization of multiple ADE9103/ADE9112/ADE9113 devices ► 4-wire SPI wit

Isolated, Sigma-Delta ADCs with SPI

FEATURES ► 2 (ADE9112) or 3 (ADE9113) channel isolated, simultaneously sampling Σ-Δ ADCs, with integrated isoPower, isolated dc-to-dc converters ► 3 (ADE9103) channel nonisolated, simultaneously sampling Σ-Δ ADCs ► Synchronization of multiple ADE9103/ADE9112/ADE9113 devices ► 4-wire SPI wit

Releasable Type T Rivets

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