Description

These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

• -0.6A and -07A, -80V and -100V

• rDS(ON) = 1.2Ω and 1.6Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, Guldelines for Soldering Surface Mount

Components to PC Boards