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IRFBE20价格
参考价格：￥3.1362
型号：IRFBE20PBF 品牌：Vishay 备注：这里有IRFBE20多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBE20批发/采购报价，IRFBE20行情走势销售排行榜，IRFBE20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBE20 | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF |   | |
IRFBE20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE20 | Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE20 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBE20 | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC | ISC 无锡固电 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
MOS(场效应管) | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFBE20产品属性
- 类型
描述
- 型号
IRFBE20
- 功能描述
MOSFET 800V Single N-Channel HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
145 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO 220 |
161389 |
明嘉莱只做原装正品现货 |
|||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
00+ |
TO-220 |
2685 |
||||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
25+ |
TO-200 |
4650 |
||||
IR |
24+ |
TO-220 |
2685 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
2023+ |
TO-220 |
8635 |
一级代理优势现货,全新正品直营店 |
IRFBE20芯片相关品牌
IRFBE20规格书下载地址
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DdatasheetPDF页码索引
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