IRFBE20价格
参考价格：￥3.1362
型号：IRFBE20PBF 品牌：Vishay 备注：这里有IRFBE20多少钱，2026年最近7天走势，今日出价，今日竞价，IRFBE20批发/采购报价，IRFBE20行情走势销售排行榜，IRFBE20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBE20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFBE20 | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF | | |
IRFBE20 | Power MOSFET • Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching; | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBE20 | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) | INFINEON 英飞凌 | | |
IRFBE20 | Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC | ISC 无锡固电 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MOS(场效应管) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：266.13 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFBE20产品属性
- 类型
描述
- 漏源电压（Vdss）：
800V
- 栅源极阈值电压（最大值）：
4V @ 250uA
- 漏源导通电阻（最大值）：
6.5 Ω @ 1.1A，10V
- 类型：
N 沟道
- 功率耗散（最大值）：
54W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VIS |
25+ |
66880 |
原装正品，欢迎询价 |
||||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
23+ |
TO-220 |
65400 |
||||
IR |
25+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
VISHAY |
25+23+ |
TO-263 |
28022 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
23+ |
TO220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
TO-220 |
98 |
||||
VISHAY |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
IRFBE20规格书下载地址
IRFBE20参数引脚图相关
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-5
DdatasheetPDF页码索引
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