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IRFBE20PBF价格

参考价格:¥3.1362

型号:IRFBE20PBF 品牌:Vishay 备注:这里有IRFBE20PBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBE20PBF批发/采购报价,IRFBE20PBF行情走势销售排行榜,IRFBE20PBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBE20PBF

HEXFET Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

IRFBE20PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRFBE20PBF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC

ISC

无锡固电

IRFBE20PBF

Power MOSFET

文件:266.13 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBE20PBF

MOS(场效应管)

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:266.13 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBE20PBF产品属性

  • 类型

    描述

  • 漏源电压(Vdss):

    800V

  • 栅源极阈值电压(最大值):

    4V @ 250uA

  • 漏源导通电阻(最大值):

    6.5 Ω @ 1.1A,10V

  • 类型:

    N 沟道

  • 功率耗散(最大值):

    54W

更新时间:2026-5-14 17:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
TO-220
12000
VISHAY专营进口原装现货假一赔十
VISHAY/威世
2022+
TO-220AB
8000
只做原装支持实单,有单必成。
VISHAY
24+
NA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
IR
25+
TO-220
30000
全新原装现货,价格优势
IR
10+
TO220
75
全新 发货1-2天
VISHAY/威世
24+
TO-220
47186
郑重承诺只做原装进口现货
IR
17+
TO-220
6200
VIS
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
Vishay(威世)
23+
NA
11800
VISHAY
23+
TO-220
65400

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