IRFB3207价格
参考价格:¥6.9323
型号:IRFB3207PBF 品牌:INTERNATIONAL 备注:这里有IRFB3207多少钱,2026年最近7天走势,今日出价,今日竞价,IRFB3207批发/采购报价,IRFB3207行情走势销售排行榜,IRFB3207报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB3207 | HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a | IRF | ||
IRFB3207 | 75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n ; | INFINEON 英飞凌 | ||
IRFB3207 | N-Channel MOSFET Transistor 文件:338.79 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFB3207 | High Efficiency Synchronous Rectification in SMPS 文件:1.44902 Mbytes Page:11 Pages | KERSEMI | ||
HEXFET짰Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA | IRF | |||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati | ISC 无锡固电 | |||
75V 单 N 通道 StrongIRFET ™功率 MOSFET,采用 TO-220 封装 \n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ; | INFINEON 英飞凌 | |||
75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 \n优势:\n• 符合 RoHS; | INFINEON 英飞凌 | |||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati | ISC 无锡固电 | |||
HEXFETPower MOSFET Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En | IRF | |||
HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA | IRF | |||
High Efficiency Synchronous Rectification in SMPS 文件:384.16 Kbytes Page:12 Pages | IRF | |||
7-bit Futurebus transceiver DESCRIPTION The FB2041 is a 7-bit bidirectional BTL transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. The FB2041 is an inverting transceiver. The B-port drivers are Low-capacitance open collectors with controlled ramp and are designed to sink | PHILIPS 飞利浦 | |||
DC/DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay drivers, | SANYO 三洋 | |||
DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high | MOTOROLA 摩托罗拉 | |||
TOPFET dual high side switch DESCRIPTION Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount package. FEATURES • Vertical power TrenchMOS • Low on-state resistance • CMOS logic compatible • Very low quiescent current • Overtemperature protection • L | PHILIPS 飞利浦 | |||
FREQUENCY DOWN CONVERTER FOR VHF TO UHF BAND RECEIVER DESCRIPTION The µPC3207GR is a Silicon monolithic IC designed for receiver applications. This IC consists of a double balanced mixer (DBM), local oscillator, preamplifier for precscaler operation, IF amplifier, regulator, UHF/VHF switching circuit, and so on. This one-chip IC covers a wide freq | NEC 瑞萨 |
IRFB3207产品属性
- 类型
描述
- OPN:
IRFB3207PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
75 V
- RDS (on) @10V max:
4.5 mΩ
- ID @25°C max:
170 A
- QG typ @10V:
180 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRFB3207ZPBF即刻询购立享优惠#长期有货 |
|||
IR |
13+ |
TO-220 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRFB3207PBF,绝对正品,欢迎咨询洽谈。 |
|||
IR |
2025+ |
TO220 |
364 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
25+ |
TO-220 |
918000 |
明嘉莱只做原装正品现货 |
|||
IR |
26+ |
TO-220 |
7500 |
绝对原装现货,价格低,欢迎询购! |
|||
IR |
26+ |
TO-220 |
13890 |
保证进口原装现货假一赔十 |
|||
INFINEON |
2026+ |
TO-220 |
5000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
IR |
24+ |
TO-220 |
66500 |
只做原装进口现货 |
|||
Infineon(英飞凌) |
25+ |
TO-220AB |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
19+ |
TO-220 |
27930 |
IRFB3207芯片相关品牌
IRFB3207规格书下载地址
IRFB3207参数引脚图相关
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRFB3607PBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
DdatasheetPDF页码索引
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