Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Material categorization: for definitions of compliance please see www.vishay.com/d

SMPS MOSFET

Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Charac

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.25Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HEXFET Power MOSFET

Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully C

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Material categorization: for definitions of compliance please see www.vishay.com/d

Power MOSFET

文件：858.46 Kbytes Page：8 Pages

Power MOSFET

文件：334.78 Kbytes Page：9 Pages

Power MOSFET

文件：195.75 Kbytes Page：9 Pages

Power MOSFET

文件：3.3763 Mbytes Page：7 Pages

Power MOSFET

SMPS MOSFET

Power MOSFET

文件：334.78 Kbytes Page：9 Pages

Power MOSFET

文件：195.75 Kbytes Page：9 Pages

Power MOSFET

文件：858.46 Kbytes Page：8 Pages

Power MOSFET

文件：195.75 Kbytes Page：9 Pages

Power MOSFET

文件：3.3763 Mbytes Page：7 Pages

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

20A 500V N-channel Enhancement Mode Power MOSFET

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Low leakage current

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20A, 500V N-CHANNEL POWER MOSFET

文件：142.14 Kbytes Page：4 Pages

20A 500V N-channel enhanced field effect transistor

文件：888.77 Kbytes Page：6 Pages