6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

Simple Drive Requirements

文件：153.89 Kbytes Page：7 Pages

Simple Drive Requirements

isc N-Channel MOSFET Transistor

DESCRIPTION • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • Hermetically Sealed • Simple Drive Requirements • Ease of Paralleling APPLICATIONS • Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse ci

Simple Drive Requirements

文件：153.89 Kbytes Page：7 Pages