P-CHANNEL 50 VOLT POWER MOSFETs

DESCRIPTION The HEXFET® technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETd are

P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

P-channel versatility

DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel

Power MOSFET

FEATURES • P-channel versatility • Compact plastic package • Fast switching • Low drive current • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology i

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -9.7A@ TC=25℃ · Drain Source Voltage -VDSS=-50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Power MOSFET

FEATURES • P-channel versatility • Compact plastic package • Fast switching • Low drive current • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology i

Power MOSFET

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