HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON RESISTANCE

文件：212.12 Kbytes Page：7 Pages

ULTRA LOW ON RESISTANCE

文件：212.12 Kbytes Page：7 Pages

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

400 MSPS 14-Bit, 1.8V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9953 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9953 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

400MSPS, 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

文件：648.08 Kbytes Page：32 Pages