P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved Inductive ruggedness • Fast switching times • Rugged polysllicon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability

P-Channel Power MOSFETs

IEEE-488, #26-6pr10c, #24-1c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-488 Cable, 26 AWG stranded (7x34) and 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 Coverage) + Tinned copper braid shield (90 Coverage), drain wire, PVC jacket.

LDPE Sheet Metal Plugs

文件：118.04 Kbytes Page：1 Pages

Power Amplifier Module

文件：173.65 Kbytes Page：3 Pages

High-efficiency Step-up Switching Regulator with Built-in Power MOSFET

文件：506.75 Kbytes Page：13 Pages

42V Input Standoff Voltage, 0.7A Step-Down Converter

文件：1.024319 Mbytes Page：7 Pages