Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Description The HEXFET technology is the key to international Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -1.8A@ TC=25℃ ·Drain Source Voltage -VDSS=-200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Power MOSFET

文件：271.64 Kbytes Page：9 Pages

SEMICONDUCTORS

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Power MOSFET

文件：157.73 Kbytes Page：8 Pages

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p

Available in Tape and Reel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Description The HEXFET technology is the key to international Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Surface

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

Power MOSFET

文件：271.64 Kbytes Page：9 Pages

Power MOSFET

文件：157.73 Kbytes Page：8 Pages

HEXFET POWER MOSFET ( VDSS=-200V , RDS(on)=3.0廓 , ID=-1.8A )

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Power MOSFET

文件：157.73 Kbytes Page：8 Pages

Power MOSFET

文件：157.73 Kbytes Page：8 Pages

HEXFET® Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.8A

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

RS232, #24-5c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

LDPE Sheet Metal Plugs

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RF amplifier

文件：213.9 Kbytes Page：2 Pages